IRG4BC20W-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — — V VGE = 0V, IC = 250µA
18 — — V VGE = 0V, IC = 1.0A
— 0.48 — V/°C VGE = 0V, IC = 1.0mA
— 2.16 2.6
IC = 6.5A
VGE = 15V
— 2.55 —
V
IC = 13A
See Fig.2, 5
— 2.05 —
IC = 6.5A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -8.8 — mV/°C VCE = VGE, IC = 250µA
5.5 8.3 — S VCE = 100 V, IC = 6.5A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
26
3.7
10
22
14
110
64
0.06
0.08
0.14
21
15
150
150
0.34
7.5
490
38
8.8
Max.
38
5.5
15
—
—
160
96
—
—
0.2
—
—
—
—
—
—
—
—
—
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 6.5A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See Fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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