JANSR2N7422U Ver la hoja de datos (PDF) - International Rectifier

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JANSR2N7422U

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

IRHN9150, JANSR2N7422U

Pre-Irradiation

Footnotes:

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = -25V, starting TJ = 25°C, L= 2.1mH

Peak IL = -22A, VGS = -12V

 ISD ≤ -22A, di/dt ≤ -450A/µs,

VDD ≤ -100V, TJ ≤ 150°C

Case Outline and Dimensions — SMD-1

à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

-12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

-80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2014

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www.irf.com

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