IRHNA9160 Ver la hoja de datos (PDF) - International Rectifier

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IRHNA9160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

International Rectifier 

Pre-Irradiation

IRHNA9160, JANSR2N7425U

VDS

L

RG

-V2 0GVS

tp

D.U .T

IA S

0.01Ω

D R IV E R

VD D

A

15V

Fig 12a. Unclamped Inductive Test Circuit

IAS

1200

1000

ID

TOP

-17A

-24A

BOTTOM -38A

800

600

400

200

0

25

50

75

100

125

150

Starting TJ, Junction Temperature ( °C)

tp

V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

-12V

QGS

VG

QG

QGD

Charge

Fig 13a. Basic Gate Charge Waveform

www.irf.com

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

-1122VV

.2µF

50KΩ

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

7

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