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IRLU

Advanced Power MOSFET

Fairchild Semiconductor 

$GYDQFHG 3RZHU 026)(7

IRLR/U110A

FEATURES

♦ Avalanche Rugged Technology

♦ Rugged Gate Oxide Technology

♦ Lower Input Capacitance

♦ Improved Gate Charge

♦ Extended Safe Operating Area

♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V

♦ Lower RDS(ON): 0.336Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25°C)

Continuous Drain Current (TC=100°C)

Drain Current-Pulsed

(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(3)

Total Power Dissipation (TA=25°C) *

Total Power Dissipation (TC=25°C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

BVDSS = 100 V

RDS(on) = 0.44Ω

ID = 4.7 A

D-PAK I-PAK

2

1

1

3

2

3

1. Gate 2. Drain 3. Source

Value

100

4.7

3

16

±20

58

4.7

2.2

6.5

2.5

22

0.18

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W

W/°C

°C

Thermal Resistance

Symbol

Characteristic

Typ.

RθJC

RθJA

RθJA

Junction-to-Case

--

Junction-to-Ambient *

--

Junction-to-Ambient

--

* When mounted on the minimum pad size recommended (PCB Mount).

Max.

5.6

50

110

Units

°C/W

Rev. B

©1999 Fairchild Semiconductor Corporation

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