IS24C16-3 Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS24C16-3

16,384-bit/8,192-bit 2-WIRE SERIAL CMOS EEPROM

Integrated Silicon Solution 

IS24C16-2, IS24C16-3

IS24C08-2, IS24C08-3

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VS

Supply Voltage

0.5 to +6.25

V

VP

Voltage on Any Pin

–0.5 to Vcc + 0.5 V

TBIAS

Temperature Under Bias

–40 to +85

°C

TSTG

Storage Temperature

–65 to +150

°C

IOUT

Output Current

5

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

OPERATING RANGE (IS24C16-2 and IS24C08-2)

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC

1.8V to 5.5V

1.8V to 5.5V

OPERATING RANGE (IS24C16-3 and IS24C08-3)

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC

2.5V to 5.5V

2.5V to 5.5V

ISSI ®

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

6

COUT

Output Capacitance

VOUT = 0V

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.

Unit

pF

pF

8

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

03/29/00

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