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IS41LV16257-35KI

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Integrated Silicon Solution 

IS41C16257

IS41LV16257

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameters

Rating

Unit

VT

Voltage on Any Pin Relative to GND 5V –1.0 to +7.0

V

3.3V –0.5 t0 +4.6

VCC

Supply Voltage

5V –1.0 to +7.0

V

3.3V –0.5 t0 +4.6

IOUT

Output Current

50

mA

PD

Power Dissipation

1

W

TA

Operation Temperature

Com.

0 to 70

°C

Ind. –40 to +85

TSTG

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)

Symbol

VCC

VCC

VIH

VIH

VIL

VIL

TA

Parameter

Voltage

Supply Voltage

Supply Voltage

Input High Voltage

Input High Voltage

Input Low Voltage

Input Low Voltage

Ambient Temperature

5V

3.3V

5V

3.3V

5V

3.3

Com.

Ind.

Min.

4.5

3.0

2.4

2.0

–1.0

–0.3

0

–40

Typ.

Max.

Unit

5.0

5.5

V

3.3

3.6

V

— VCC + 1.0

V

— VCC + 0.3

V

—

0.8

V

—

0.8

V

—

70

°C

—

85

CAPACITANCE(1,2)

Symbol Parameter

Max.

Unit

CIN1

Input Capacitance: A0-A8

CIN2

Input Capacitance: RAS, UCAS, LCAS, WE, OE

CIO

Data Input/Output Capacitance: I/O0-I/O15

5

pF

7

pF

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VCC = 5.0V + 10% or Vcc=3.3V ± 10%.

Integrated Silicon Solution, Inc. — 1-800-379-4774

5

DR004-1B

05/24/99

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