IS41LV16100A Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS41LV16100A

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution 

IS41LV16100A

CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)

ISSI ®

RAS

tRPC

tCP

UCAS/LCAS

I/O

tRP

tRAS

tCHR

tCSR

tRPC

tRP

tRAS

tCSR

tCHR

Open

HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)

RAS

tCRP

UCAS/LCAS

tASR

ADDRESS

Row

I/O

OE

tRAS

tRP

tRCD

tRSH

tAR

tRAD

tRAH tASC

tRAL

tCAH

Open

Column

tAA

tRAC

tCLZ

tCAC

tOE

tORD

tRAS

tCHR

tOFF(2)

Valid Data

Notes:

1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.

2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.

Open

tOD

Undefined

Don’t Care

18

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

03/02/05

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