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IS41LV16100B-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution 

IS41LV16100B

ISSI ®

EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles)

RAS

tCRP

UCAS/LCAS

tASR

tRAH

tCSH

tRCD

tCAS, tCLCH

tAR

tRAD

tASC

tCAH

ADDRESS

Row

Column

tRASP

tPC / tPRWC(1)

tCP

tCAS, tCLCH

tASC

tCAH

Column

tRSH

tCP

tCAS, tCLCH

tASC

tRAL

tCAH

Column

tRP

tCP

Row

tRWD

tRCS

tCWL

tWP

tAWD

tCWD

tCWL

tWP

tAWD

tCWD

tRWL

tCWL

tWP

tAWD

tCWD

WE

tAA

tRAC

tCAC

tCLZ

tDH

tDS

tAA

tCPA

tCAC

tCLZ

tDH

tDS

tAA

tCPA

tCAC

tCLZ

tDH

tDS

I/O

Open

DOUT DIN

DOUT DIN

DOUT DIN

Open

tOD

tOD

tOD

tOE

tOE

tOE

tOEH

OE

Undefined

Don’t Care

Note:

1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both

measurements must meet the tPC specifications.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

15

Rev. B

04/13/05

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