IS61LV2568L-8T(2005) Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS61LV2568L-8T
(Rev.:2005)

256K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61LV2568L

ISSI ®

AC WAVEFORMS

WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)

ADDRESS

OE

t WC

VALID ADDRESS

t HA

CE LOW

WE

DOUT

t SA

DATA UNDEFINED

t AW

t PWE1

t HZWE

HIGH-Z

t LZWE

DIN

t SD

t HD

DATAIN VALID

CE_WR2.eps

Note:

1. The internal Write time is defined by the overlap of CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any

can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that

terminates the Write.

WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)

ADDRESS

OE LOW

t WC

VALID ADDRESS

t HA

CE LOW

WE

DOUT

t SA

DATA UNDEFINED

DIN

t AW

t PWE2

t HZWE

HIGH-Z

t LZWE

t SD

t HD

DATAIN VALID

CE_WR3.eps

Note:

1. The internal Write time is defined by the overlap of CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any

can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that

terminates the Write.

10

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

07/25/05

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