IS62C1024 Ver la hoja de datos (PDF) - Integrated Silicon Solution

Número de pieza

componentes Descripción

Lista de partido

IS62C1024

128K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS62C1024

ISSI ®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

-35

-45

-55

-70

Min. Max. Min. Max. Min. Max. Min. Max. Unit

ICC Vcc Dynamic Operating VCC = Max., CE = VIL Com. — 150

Supply Current

IOUT = 0 mA, f = fMAX

Ind. — 160

— 135

— 145

— 120

— 130

— 90

mA

— 100

ISB1 TTL Standby Current

(TTL Inputs)

VCC = Max.,

Com. — 40

VIN = VIH or VIL, CE1 ≥ VIH, Ind. — 60

or CE2 ≤ VIL, f = 0

— 40

— 60

— 40

— 60

— 40

mA

— 60

ISB2 CMOS Standby

VCC = Max.,

Com. — 30

Current (CMOS Inputs) CE1 ≤ VCC – 0.2V,

Ind. — 40

CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V,

or VIN ≤ 0.2V, f = 0

— 30

— 40

— 30

— 40

— 30

mA

— 40

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

Unit

0V to 3.0V

5 ns

1.5V

See Figures 1a and 1b

AC TEST LOADS

480 Ω

5V

OUTPUT

100 pF

Including

jig and

scope

Figure 1a.

255 Ω

480 Ω

5V

OUTPUT

5 pF

Including

jig and

scope

Figure 1b.

255 Ω

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

01/14/00

Share Link: