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IS61WV12816DALL

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution 

IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,

IS64WV12816DBLL/DBLS

AC TEST CONDITIONS

Parameter

Unit

Unit

Unit

1

(2.4V-3.6V)

(3.3V + 5%)

(1.65V-2.2V)

Input Pulse Level

0.4V to VDD - 0.3V

0.4V to VDD - 0.3V

0.4V to VDD - 0.3V

Input Rise and Fall Times

1V/ ns

1V/ ns

1V/ ns

2

Input and Output Timing

VDD /2

VDD + 0.05

0.9V

and Reference Level (VRef)

2

Output Load

R1 ( Ω )

See Figures 1 and 2

1909

See Figures 1 and 2

317

See Figures 1 and 2

13500

3

R2 ( Ω )

1105

351

10800

VTM (V)

3.0V

3.3V

1.8V

4

AC TEST LOADS

OUTPUT

ZO = 50Ω

50Ω

VDD/2

30 pF

Including

jig and

scope

5

R1

VTM

OUTPUT

6

5 pF

Including

jig and

scope

R2

7

Figure 1.

Figure 2.

8

9

10

11

12

Integrated Silicon Solution, Inc. — www.issi.com

5

Rev. D

06/21/2011

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