IS63LV1024 Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS63LV1024

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

Integrated Silicon Solution 

IS63LV1024

IS63LV1024L

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

Parameter

VDD for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.0V, CE ≥ VDD – 0.2V

tSDR

Data Retention Setup Time See Data Retention Waveform

tRDR

Recovery Time

See Data Retention Waveform

Note 1: Typical values are measured at VDD = 3.0V, TA = 25OC and not 100% tested.

Options

IS63LV1024

IS63LV1024L

Min. Typ.(1) Max. Unit

2.0

—

3.6

V

—

0.5 10 mA

—

0.05 1.5

0

—

—

ns

tRC

—

—

ns

DATA RETENTION WAVEFORM (CE Controlled)

VDD

VDR

CE

GND

tSDR

Data Retention Mode

tRDR

CE ≥ VDD - 0.2V

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

9

Rev. I

1/26/07

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