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ISL9008A

Low Noise LDO with Low IQ, High PSRR

Intersil 

ISL9008A

Overheat Detection

The bandgap outputs a proportional-to-temperature current

that is indicative of the temperature of the silicon. This

current is compared with references to determine if the

device is in danger of damage due to overheating. When the

die temperature reaches about +140°C, the LDO

momentarily shuts down until the die cools sufficiently. In the

overheat condition, if the LDO sources more than 50mA it

will be shut off. Once the die temperature falls back below

about +110°C, the disabled LDO is re-enabled and soft-start

automatically takes place.

9

FN6300.4

March 11, 2008

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