ISL9R1560G2 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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ISL9R1560G2 Datasheet PDF : 6 Pages
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Symbol
Parameter
Ratings
Units
PD
EAVL
TJ, TSTG
TL
TPKG
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
150
W
20
mJ
-55 to 175
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Package Marking and Ordering Information
Device Marking
R1560G2
R1560P2
R1560S2
R1560S3S
Device
ISL9R1560G2
ISL9R1560P2
ISL9R1560S2
ISL9R1560S3S
Package
TO-247
TO-220AC
TO-262
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 15A
TC = 25°C
TC = 125°C
- 1.8 2.2 V
- 1.65 2.0 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
-
62
-
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
IF = 15A, dIF/dt = 100A/µs, VR = 30V -
IF = 15A,
-
dIF/dt = 200A/µs,
-
VR = 390V, TC = 25°C
-
IF = 15A,
-
dIF/dt = 200A/µs,
-
VR = 390V,
-
TC = 125°C
-
IF = 15A,
-
dIF/dt = 800A/µs,
-
VR = 390V,
-
TC = 125°C
-
-
25 30 ns
35 40 ns
29.4 -
ns
3.5 -
A
57
-
nC
90
-
ns
2.0 -
5.0 -
A
275
-
nC
52
-
ns
1.36 -
13.5 -
A
390
-
nC
800 - A/µs
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
-
- 1.0 °C/W
-
-
30 °C/W
-
-
62 °C/W
-
-
62 °C/W
-
-
62 °C/W
©2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
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