ISL9V2040D3S Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
ISL9V2040D3S Datasheet PDF : 8 Pages
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Typical Performance Curves (Continued)
1200
1000
FREQUENCY = 1 MHz
800
CIES
600
400
CRES
200
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
6
VCE = 12V
5
4
3
2
VCE = 6V
1
0
0
5
10
15
20
25
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
415
410
405
400
395
390
385
380
375
370
10
TJ = 175°C
TJ = 25°C
ICER = 10mA
TJ = - 40°C
100
1000
RG, SERIES GATE RESISTANCE (kΩ)
Figure 15. Breakdown Voltage vs Series Gate Resistance
2000 3000
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004
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