IXA12IF1200HB Ver la hoja de datos (PDF) - IXYS CORPORATION

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IXA12IF1200HB

XPT IGBT

IXYS CORPORATION 

Diode

20

15

IF

10

[A]

5 TVJ = 125°C

TVJ = 25°C

2.4

2.0 20 A

1.6

Qrr

10 A

1.2

[μC]

0.8 5 A

0.4

TVJ = 125°C

VR = 600 V

IXA12IF1200PB

preliminary

24

TVJ = 125°C

VR = 600 V

20 A

20

IRM

16

10 A

[A]

5A

12

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VF [V]

Fig. 1 Typ. forward current

versus VF

0.0

200 250 300 350 400 450 500

diF /dt [A/μs]

Fig. 2 Typical reverse recov. charge

Qrr versus. diF /dt

8

200 250 300 350 400 450 500

diF /dt [A/μs]

Fig.3 Typ: peak reverse current

IRR versus diF /dt

500

20 A

400

10 A

trr

300

[ns]

5A

200

TVJ = 125°C

VR = 600 V

0.6

0.5 20 A

Erec 0.4 10 A

[mJ] 0.3

0.2 5 A

TVJ = 125°C

VR = 600 V

Fig. 4 Dynamic parameters

Qrr, IRM versus TVJ

100

200 250 300 350 400 450 500

diF /dt [A/μs]

Fig. 5 Typ. recovery time

trr versus diF /dt

0.1

200 250 300 350 400 450 500

diF /dt [A/μs]

Fig. 6 Typ. recovery energy

Erec vs. diF /dt

Fig. 7 Typ. transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

© 2011 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20110330a

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