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K4E641612B-T Ver la hoja de datos (PDF) - Samsung

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K4E641612B-T Datasheet PDF : 36 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
K4E661612B, K4E641612B
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
ICC1
Dont care
Speed
-45
-50
-60
K4E661612B
100
90
80
Max
ICC2
Normal
L
Dont care
2
2
-45
100
ICC3
Dont care
-50
90
-60
80
-45
110
ICC4
Dont care
-50
100
-60
90
ICC5
Normal
L
Dont care
500
300
-45
100
ICC6
Dont care
-50
90
-60
80
ICC7
L
Dont care
400
ICCS
L
Dont care
400
K4E641612B
130
120
110
2
2
130
120
110
120
110
100
500
300
130
120
110
400
400
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Dont care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.

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