IRF620 Ver la hoja de datos (PDF) - Intersil
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IRF620 Datasheet PDF : 7 Pages
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IRF620
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
D
Rectifier
G
MIN TYP MAX UNITS
-
-
5.0
A
-
-
20
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs
-
-
1.8
V
- 350 -
ns
-
2.3
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50Ω, peak IAS = 5A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-198
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