K9F2G08Q0M Ver la hoja de datos (PDF) - Samsung

Número de pieza

componentes Descripción

Lista de partido

K9F2G08Q0M

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Samsung 

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

Preliminary

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and

is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10µs is required before internal cir-

cuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides

additional software protection.

Figure 18. AC Waveforms for Power Transition

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

VCC

High

WP

WE

10µs

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

38

Share Link: