K9F2G08R0A Ver la hoja de datos (PDF) - Samsung

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K9F2G08R0A

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08R0A

K9F2G08U0A

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.1V(1.8V device), 2V(3.3V device). WP pin provides hardware protection and is

recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 100µs is required before internal cir-

cuit gets ready for any command sequences as shown in Figure 21. The two step command sequence for program/erase provides

additional software protection.

Figure 21. AC Waveforms for Power Transition

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

VCC

High

WP

WE

100µs

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

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