K9K8G08U1A Ver la hoja de datos (PDF) - Samsung
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K9K8G08U1A Datasheet PDF : 43 Pages
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K9K8G08U1A
K9F4G08U0A
Preliminary
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9XXG08UXA-XCB0
K9XXG08UXA-XIB0
K9XXG08UXA-XCB0
K9XXG08UXA-XIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to +4.6
-0.6 to +4.6
-0.6 to Vcc + 0.3 (< 4.6V)
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08UXA-XCB0 :TA=0 to 70°C, K9XXG08UXA-XIB0:TA=-40 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Page Read with
Operating Serial Access
Current Program
Erase
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Symbol
ICC1
ICC2
ICC3
ISB1
ISB2
ILI
ILO
VIH(1)
VIL(1)
VOH
VOL
IOL(R/B)
Test Conditions
tRC=25ns
CE=VIL, IOUT=0mA
-
-
CE=VIH, WP=0V/VCC
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
-
-
IOH=-400µA
IOL=2.1mA
VOL=0.4V
Min
Typ
Max
Unit
-
15
30
mA
-
-
1
-
10
50
-
-
±10
µA
-
-
±10
0.8xVcc
-
Vcc+0.3
-0.3
-
0.2xVcc
V
2.4
-
-
-
-
0.4
8
10
-
mA
NOTE : 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
3. The typical value of the K9K8G08U1A’s ISB2 is 20µA and the maximum value is 100µA.
10
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