KSH13009L Ver la hoja de datos (PDF) - Semihow
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KSH13009L Datasheet PDF : 7 Pages
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KSH13009L
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
700
400
9
12
24
6
130
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
12 Amperes
NPN Silicon Power Transistor
100 Watts
TO-3P
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
VCEO(sus)
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
ton
tstg
tF
IC=10mA, IB=0
VEB=9V,IC=0
VCE=5V,IC=5A
VCE=5V,IC=8A
IC=5A,IB=1A
IC=8A,IB=1.6A
IC=12A,IB=3A
IC=5A,IB=1A
IC=8A,IB=1.6A
VCB=10V, f=0.1MHz
VCE=10V,IC=0.5A
Vcc=125V, Ic=8A
IB1=1.6A, IB2= -1.6A
RL=15.6Ω
Min Typ. Max Unit
400
V
1
mA
8
40
6
30
1
V
1.5
V
3
V
1.2
V
1.6
V
180
pF
4
MHz
1.1 μS
3
μS
0.7 μS
Note : hFE1 Classification
R :8 ~ 17, O : 15 ~ 28, Y : 26 ~ 39
◎ SEMIHOW REV.A0,May 2003
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