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IRFF420 Datasheet PDF : 7 Pages
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IRFF420
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF420
500
500
1.6
6.5
±20
20
0.16
210
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance
(Note 2)
BVDSS VGS = 0V, ID = 250µA (Figure 10)
500
VGS(TH) VGS = VDS, ID = 250µA
2.0
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
1.6
IGSS VGS = ±20V
-
rDS(ON) VGS = 10V, ID = 1.0A (Figures 8, 9)
-
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
gfs
VDS ≥ 10V, ID = 2.0A (Figure 12)
1.5
td(ON) VDD = 0.5 x Rated BVDSS, RG = 9.1Ω, VGS = 10V,
-
tr
ID ≈ 1.6A (Figures 17, 18), RL = 152Ω for VDSS = 250V,
-
RL = 137Ω for VDSS = 225V, MOSFET Switching
td(OFF) Times are Essentially Independent of Operating
-
tf
Temperature
-
Qg(TOT) VGS = 10V, ID = 1.6A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Qgs
Essentially Independent of Operating Temperature.
-
Qgd
-
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
COSS
-
CRSS
-
LD
Measured from the Drain Modified MOSFET
-
Lead, 5mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
LS
Measured from the
Inductances
-
Source Lead, 5mm (0.2in)
D
from Header and Source
Bonding Pad
LD
G
LS
S
Thermal Resistance Junction to Case
RθJC
-
Thermal Resistance Junction to Ambient RθJA Free Air Operation
-
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250
µA
-
-
A
- ±100 nA
2.5 3.000 Ω
2.5
-
S
30
60
ns
25
50
ns
30
60
ns
15
30
ns
11
15
nC
5.0
-
nC
6.0
-
nC
300
-
pF
75
-
pF
20
-
pF
5.0
-
nH
15
-
nH
-
6.25 oC/W
-
175 oC/W
2
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