L9349-LF(2008) Ver la hoja de datos (PDF) - STMicroelectronics
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L9349-LF Datasheet PDF : 17 Pages
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L9349-LF
3
Electrical specifications
Electrical specifications
3.1
3.2
Absolute maximum ratings
Table 3. Absolute maximum ratings
Symbol
Parameter
Conditions
Value
Unit
VS DC supply voltage
VSP
Supply voltage pulse
(duration <200ms)
-0.3 to 32
V
-0.3 to 45
V
⎪dVS/dt⎪
VIN, EN
VD
VODC
Supply voltage slope
Input voltage
Diagnostic DC output voltage
DC output voltage
IO1, 2 DC output current out 1, 2
⎪I⎪10mA
⎪I⎪ 50mA
10
V/μs
-1.5 to 6
V
-0.3 to 16
V
-0.3 to 45
V
>5 (Min.)
A
internal limited (Max.)
IO3, 4 DC output current out 3, 4
>3 (Min.)
A
internal limited (Max.)
IOR1, 2 Reverse output current
-5
A
IOR3, 4
EO1, 2
EO3, 4
Reverse output current
Switch-off energy for inductive
loads
tEO = 250μs,(1)
T = 5ms
-3
A
50
mJ
30
mJ
ΔVGND GND potential difference
Tj = -40 to 150°C
±0.3
V
TjEO
Junction temperature during switch- Σt ≤ 30 min
off
Σt ≤ 15 min
175
°C
190
°C
Tj
Tstg
TjDIS
Junction temperature
Storage temperature
Thermal disable junction
temperature threshold
-40 to TjDIS
°C
-55 to 150
°C
180 to 210
°C
ESD Electrostatical discharging
MIL883C
+-2
kV
ESD OUT1 - 4
vs. Common-GND
(PGNDs + GND)
+-4
kV
1. tEO is the clamping time (see Figure 3)
Thermal data
Table 4. Thermal data
Symbol
Parameter
RTh j-case Thermal resistance junction to case
Value
3
Unit
°C/W
7/17
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