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LT3759H Ver la hoja de datos (PDF) - Linear Technology

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LT3759H Datasheet PDF : 32 Pages
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LT3759
APPLICATIONS INFORMATION
regulates the INTVCC to 3.75V. VIN LDO is turned off when
the INTVCC voltage is greater than 3.75V (typical). Both
LDO’s can be turned off if the INTVCC pin is driven by a
supply of 4.75V or higher but less than 8V (the INTVCC
maximum voltage rating is 8V). A table of the LDO sup-
ply and output voltage combination is shown in Table 1.
Table 1. LDO’s Supply and Output Voltage Combination (Assuming
That the LDO Dropout Voltage is 0.15V)
SUPPLY VOLTAGES
LDO OUTPUT
VIN
VIN ≤ 3.9V
3.9V < VIN ≤ 42V
DRIVE
VDRIVE < VIN
VDRIVE = VIN
VIN < VDRIVE < 4.9V
4.9V ≤ VDRIVE ≤ 42V
VDRIVE < 3.9V
VDRIVE = 3.9V
3.9V < VDRIVE < 4.9V
4.9V ≤ VDRIVE ≤ 42V
INTVCC
VIN – 0.15V
VIN – 0.15V
VDRIVE – 0.15V
4.75V
3.75V
3.75V
VDRIVE – 0.15V
4.75V
LDO STATUS
(Note 7)
#1 Is ON
#1 #2 are ON
#2 Is ON
#2 Is ON
#1 Is ON
#1 #2 are ON
#2 Is ON
#2 Is ON
Note 7: #1 is VIN LDO and #2 is DRIVE LDO
The DRIVE pin provides flexibility to power the gate driver
and the internal loads from a supply that is available only
when the switcher is enabled and running. If not used, the
DRIVE pin should be tied to VIN.
The INTVCC pin must be bypassed to ground immediately
adjacent to the INTVCC pin with a minimum of 4.7µF ceramic
capacitor. Good bypassing is necessary to supply the high
transient currents required by the MOSFET gate driver.
If a low input voltage operation is expected (VIN is 3V or
less), low threshold MOSFETs should be used. The LT3759
contains an undervoltage lockout comparator A8 for the
internal INTVCC supply. The INTVCC undervoltage (UV)
threshold is 1.3V (typical), with 100mV hysteresis, to
ensure that the MOSFETs have sufficient gate drive voltage
before turning on. The logic circuitry within the LT3759
is also powered from the internal INTVCC supply. When
INTVCC is below the UV threshold, the GATE pin will be
forced to GND and the soft-start operation will be triggered.
In an actual application, most of the IC supply current is
used to drive the gate capacitance of the power MOSFET.
The on-chip power dissipation can be a significant con-
cern when a large power MOSFET is being driven at a
high frequency and the VIN voltage is high. It is important
to limit the power dissipation with proper selection of a
MOSFET and/or an operating frequency so the LT3759
does not exceed its maximum junction temperature rating.
The junction temperature TJ can be estimated using the
following equations:
TJ = TA +PIC θJA
TA = ambient temperature
θJA = junction-to-ambient thermal resistance
PIC = IC power consumption = VIN • (IQ + IDRIVE)
(Assume the DRIVE pin is connected to VIN Supply)
IQ = VIN operation IQ = 1.8mA
IDRIVE = average gate drive current = f • QG
f = switching frequency
QG = power MOSFET total gate charge
The LT3759 uses packages with an exposed pad for en-
hanced thermal conduction. With proper soldering to the
exposed pad on the underside of the package and a full
copper plane underneath the device, thermal resistance
(θJA) will be about 40°C/W for the MSE package.
The LT3759 has an internal INTVCC IDRIVE current limit
function to protect the IC from excessive on-chip power
dissipation. If IDRIVE reaches the current limit, INTVCC
voltage will fall and may trigger the soft-start.
There is a trade-off between the operating frequency and
the size of the power MOSFET (QG) in order to maintain
a reliable IC junction temperature. Prior to lowering the
operating frequency, however, be sure to check with
power MOSFET manufacturers for their most recent low
QG, low RDS(ON) devices. Power MOSFET manufacturing
technologies are continually improving, with newer and
better performance devices being introduced almost yearly.
Operating Frequency and Synchronization
The choice of operating frequency may be determined
by on-chip power dissipation, otherwise it is a trade-off
between efficiency and component size. Low frequency
3759fc
10
For more information www.linear.com/3759

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