1N4005 Ver la hoja de datos (PDF) - LiteOn Technology
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1N4005 Datasheet PDF : 3 Pages
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LITE-ON
SEMICONDUCTOR
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
1N4001 thru 1N4007
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
DO-41
A
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
DO-41
Dim.
Min.
Max.
A
25.4
-
B
4.10
5.20
C
0.71
0.86
D
2.00
2.70
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
50
VRMS
35
VDC
50
100
200
400
600
800
1000 V
70
140
280
420
560
700
V
100
200
400
600
800
1000 V
Maximum Average Forward
Rectified Current
@TA=75 C I(AV)
1.0
A
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
30
A
super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 1.0A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
IR
I2 t Rating for fusing (t < 8.3ms)
2
It
1.0
V
5
50
uA
2
3.7
AS
Typical Junction Capacitance (Note 1)
CJ
15
pF
Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Trr
R0JA
R0JC
TJ
0.5 ~ 5.0
us
50
12
C/W
-55 to +125
C
Storage Temperature Range
TSTG
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3.Thermal Resistance Junction to Ambient and Case.
-55 to +150
C
REV. 8, Sep-2012, KDAC01
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