EDE5104GBSA Ver la hoja de datos (PDF) - Elpida Memory, Inc
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EDE5104GBSA Datasheet PDF : 56 Pages
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EDE5104GBSA, EDE5108GBSA, EDE5116GBSA
-5A
-4A
Frequency (Mbps)
533
400
Parameter
Symbol min.
max.
min.
max.
Unit
Address and control input hold time tIH
500
600
ps
ddress and A control input setup time tIS
500
600
ps
Read preamble
tRPRE 0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST 0.4
0.6
0.4
0.6
tCK
Active to precharge command
tRAS
45
45
ns
Active to active/auto refresh command
time
tRC
60
65
ns
Active to read or write command delay tRCD 15
20
ns
Precharge command period
tRP
15
20
ns
Active to auto-precharge delay
tRAP
tRCD min.
tRCD min.
ns
Active bank A to active bank B
command period
tRRD 7.5
10
ns
(EDE5104GB, EDE5108GB)
(EDE5116GB)
tRRD
10
10
ns
Write recovery time
tWR
15
15
ns
Auto precharge write recovery +
precharge time
tDAL
(tWR/tCK)+
(tRP/tCK)
(tWR/tCK)+
(tRP/tCK)
tCK
Internal write to read command delay tWTR 7.5
10
ns
Exit self refresh to any command
tXSC
200
200
tCK
Exit power down to any non-read
command
tXPNR 2
2
tCK
Exit precharge power down to read
command
tXPRD 6 – AL
6 – AL
tCK
Exit active power down to read
command
tXARD 2
2
tCK
Exit active power down to read
command
tXARDS 6 – AL
6 – AL
tCK
(slow exit/low power mode)
Output impedance test driver delay
tOIT
0
12
0
12
ns
Auto refresh to active/auto refresh
command time
tRFC
105
105
ns
Average periodic refresh interval
tREFI
7.8
7.8
µs
Notes: 1. For each of the terms above, if not already an integer, round to the next highest integer.
2. AL: Additive Latency.
3. MRS A12 bit define which active power down exit timing to be applied.
Notes
1
2
3
3
Preliminary Data Sheet E0249E30 (Ver. 3.0)
8
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