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M32L1632512A-7SQ Datasheet PDF : 54 Pages
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M32L1632512A
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted, TA = 0 to 70 °C VIH(min) /VIL(max) =2.0V/0.8V
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
Burst Length = 1
ICC1 tRC ≥ tRC(min), tCC ≥ tCC(min)
IOL = 0 mA
CAS
Version
Unit Note
Latency -5/5S -6/6S -7/7S -8/8S
3 230 210 195 170
mA 1
2 230 210 195 170
Precharge Standby Current ICC2P CKE ≤ VIL(max), tCC = 15ns
222
2
mA
in power-down mode
t ICC2PS CKE ≤ VIL(max), CLK ≤ VIL(max), CC = ∞
2
2
2
2
ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns 35 35 35 35
Precharge Standby Current
in non power-down mode
Input signals are changed one time during
30ns
mA
t ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), CC = ∞
input signals are stable
15 15 15 15
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 15ns
t ICC3PS CKE ≤ VIL(min), CLK ≤ VIL(max), CC = ∞
333
333
3
mA
3
Active Standby Current
ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns 60 60 60 60
in non power-down mode
Input signals are changed one time during
mA
(One Bank Active)
30ns
t ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), CC = ∞
input signals are stable
20 20 20 20
Operating Current
(Burst Mode)
IOL = 0 mA, Page Burst
3
ICC4 All Banks Activated, tCCD = tCCD
(min)
2
230 210 195 170
mA 1, 2
230 210 195 170
Refresh Current
ICC5
Self Refresh Current
ICC6
Operating Current
ICC7
(One Bank Block Write)
3
tRC ≥ tRC(min)
2
CKE ≤ 0.2V
tCC ≥ tCC(min), IOL = 0 mA, tBWC(min)
190 170 160 150
mA 3
190 170 160 150
2 2 2 2 mA
220 200 190 180 mA 4
*Note : 1. Measured with outputs open.
2. Assumes minimum column address update cycle tCCD(min).
3. Refresh period is 32ms.
4. Assumes minimum column address update cycle tBWC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2001
Revision : 1.6
5/54
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