GLT6100L08LL-85TS Ver la hoja de datos (PDF) - G-Link Technology

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GLT6100L08LL-85TS

Ultra Low Power 128k x 8 CMOS SRAM

G-Link Technology  

G-LINK

GLT6100L08

Ultra Low Power 128k x 8 CMOS SRAM

Nov 2000(Rev. 02)

Pin Descriptions:

Name

A 0 - A16

CE 1 and CE2

OE

WE

I/ O0 -I/ O7

VCC

GND

NC

Function

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

Data Input and Data Output

3V Power Supply

Ground

No Connection

Truth Table:

CE1

CE2

WE

OE

H

X

X

X

X

L

X

X

L

H

H

L

L

H

H

H

L

H

L

X

Data

High-Z

High-Z

Data Out

High-Z

Data Out

Mode

Standby

Standby

Active, Read

Active, Output Disable

Active, Write

Absolute Maximum Ratings*

Parameter

Voltage on Any Pin Relative to Gnd

Power Dissipation

Storage Temperature (Plastic)

Temperature Under Bias

Symbol

Vt

PT

Tstg

Tbias

Minimum

-0.5

-

-55

-40

Maximum

4.6

1.0

+150

+85

Unit

V

W

°C

°C

*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any conditions outside those indicated

in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

Recommended Operating Conditions ( TA = -25°C to 85°C )**

Parameter

Symbol

Min

Typ

Supply Voltage

VCC

2.7

3.0

Input Voltage

VIH

2.2

-

VIL

-0.5*

-

Max

3.3

VCC+0.5

0.6

Unit

V

V

V

* VIL min = -1.0V for pulse width less than tRC/2.

** For Industrial Temperature.

G-Link Technology Corporation

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-2-

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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