GLT6100L08LL-55ST Ver la hoja de datos (PDF) - G-Link Technology
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GLT6100L08LL-55ST Datasheet PDF : 10 Pages
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G-LINK
GLT6100L08
Ultra Low Power 128k x 8 CMOS SRAM
Nov 2000(Rev. 02)
Write Cycle (3,9)( Vcc=2.7V to 3.3V, TA = -25°C to 85°C )
Parameter
Write Cycle Time
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
Write Pulse Width
Write Recovering Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
55
70
85
100
Symbol
Unit Note
Min Max Min Max Min Max Min Max
tWC
55
70
85
100
ns
tCW
45
60
70
80
ns
tAW
45
60
70
80
ns
tAS
0
0
0
0
ns
tWP
45
50
60
70
ns
tWR
0
0
0
0
ns
tDW
25
30
35
40
ns
tDH
0
0
0
0
ns
tWZ
25
30
35
40 ns
tOW
5
5
5
5
ns
Timing Waveform of Write Cycle 1 (10,11) ( WE Controlled)
Address
tWC
tAW
tWR
WE
tAS
DIN
DOUT
tWP
tDW
tDH
Data Valid
tWZ
tOW
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
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G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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