CR5AS Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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CR5AS Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS
102
7
5
3
2
VFGM = 6V
101
7
5
PGM = 0.5W
3
2
PG(AV) = 0.1W
VGT = 0.8V
100
7
5
3
2
IGT = 200µA
(Tj = 25°C)
IFGM = 0.3A
10–1
7
VGD = 0.1V
510–12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
Tj = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
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0
–60 –40–20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
16
180°
14
90° 120°
12
60°
10
8
6
θ = 30°
4
θ
2
360°
0
RESISTIVE, INDUCTIVE LOADS
012345678
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
#1
IGT (25°C)
3
#2
# 1 @11µA
2
# 2 @61µA
102
7
5
3
2
101
7
5
3
2
VD = 6V
RL = 60Ω
100
–60 –40 –20 0
20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
3
2
JUNCTION TO AMBIENT
102
7
5
3
2
101
7
5
3
2
100
JUNCTION TO CASE
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
60
40
20 θ = 30°
90°
180°
60° 120°
0
012345678
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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