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MAR7001FD

Radiation Hard 512x9 Bit FIFO

Dynex Semiconductor 

MA7001

DC CHARACTERISTICS AND RATINGS

Symbol Parameter

Min. Max. Units

VDD

Supply Voltage

-0.5

7.0

V

VIN

Input Voltage

-0.3 VDD+0.3 V

TA

Operating Temperature -55

125

°C

TS

Storage Temperature

-65

150

°C

Stresses above those listed may cause permanent

damage to the device. This is a stress rating only and

functional operation of the device at these conditions, or at

any other condition above those indicated in the

operations section of this specification, is not Implied

Exposure to absolute maximum rating conditions for

extended periods may affect device reliability.

Figure 2: Absolute Maximum Ratings

The following D.C. and A.C. electrical characteristics apply to pre-radiation at TA = -55°C to +125°C, VDD = 5V ±10% and post

100kRad(Si) total dose radiation at TA = 25°C, VDD = 5V ±10%. GROUP A SUBGROUP 1, 2, 3.

Symbol Parameter

Conditions

Min. Typ. Max. Unit

VIH Input logic '1' voltage

-

2.0

-

-

V

VIL Input logic '0' voltage

-

-

-

0.8

V

IIL

Input leakage current (any input) (Note 4)

Note 1

-10

-

10

µA

IOL Output leakage current (Note 4)

Note 2

-50

-

50

µA

VOH Output logic '1' voltage

lOUT = -1mA

2.4

-

-

V

VOL Output loglc '0' voltage

lOUT = 2mA

-

-

0.4

V

IDD1 Average VDD power supply current (Note 3) Freq = 10MHz

-

70 100 mA

IDD2 Average standby current (Note 3)

R = W = RS = FL/RT = VDD/2

-

8

15 mA

IDD3(L) Powerdown current (Note 3)

All Inputs = VDD -0.2V

-

-

3.0 mA

NOTES:

1. Measurements with VSS ≤ VIN ≤ VDD

2. R > VIH, VSS ≤ VOUT ≤ VDD

3. IDD measurements are made wlth outputs open, VDD = 5.5V

4. Guaranteed but not measured at -55°C

Figure 3a: DC Electrical Characteristics

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