MAC12 Ver la hoja de datos (PDF) - ON Semiconductor
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MAC12 Datasheet PDF : 6 Pages
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MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM,
TJ = 25°C
IRRM
-
TJ = 110°C
-
-
0.01
-
2.0
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM = ± 17 A)
VTM
-
-
1.85
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IGT
-
-
-
1.5
5.0
2.5
5.0
2.7
5.0
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
-
2.5
10
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IL
-
3.0
15
-
5.0
20
-
3.0
15
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
0.45
0.68
1.5
0.45
0.62
1.5
0.45
0.67
1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(di/dt)c
8.0
10
-
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open,
TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
Critical Rate of Rise of Off-State Voltage
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW,
TJ = 110°C)
dV/dt
15
40
-
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA;
f = 60 Hz
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
di/dt
-
-
10
Unit
°C/W
°C
Unit
mA
V
mA
mA
mA
V
A/ms
V/ms
A/ms
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