MBR340TR Ver la hoja de datos (PDF) - Vishay Semiconductors

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MBR340TR

Schottky Rectifier, 3 A

Vishay Semiconductors 

MBR340

Schottky Rectifier, 3 A Vishay High Power Products

1000

100

TJ = 25 °C

100

10

1

Tj = 150 °C

Tj = 125 °C

Tj = 25 °C

0.1

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Forward Voltage Drop - V FM (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

10

0

40 80 120 160 200

Reverse Voltage - V R (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

170

150

130

DC

110

90

Square wave (D = 0.50)

70 80% Rated Vr applied

50 see note (1)

30

0

1

2

3

4

5

Average Forward Current - I F(AV) (A)

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

100

2.5

10

TJ = 150 °C

2

1

125 °C

0.1

0.01

25°C

0.001

0

10

20

30

40

Reverse Voltage - V R (V)

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1.5

RMS Limit

1

0.5

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

DDCC

0

0

1

2

3

4

5

Average Forward Current - I F(AV) (A)

Fig. 5 - Forward Power Loss Characteristics

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

Document Number: 93449

Revision: 06-Nov-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

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