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MC-4516CD642XS-A75L Ver la hoja de datos (PDF) - Elpida Memory, Inc

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MC-4516CD642XS-A75L Datasheet PDF : 14 Pages
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CD642XS
16M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
EThe MC-4516CD642XS is 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on
which 8 pieces of 128M SDRAM: µPD45128163 are assembled.
This module provide high density and large quantities of memory in a small space without utilizing the surface-
Omounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
L Features
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency (MAX.) Access time from CLK (MAX.)
MC-4516CD642XS-A75
CL = 3
133 MHz
5.4 ns
PCL = 2
100 MHz
6 ns
MC-4516CD642XS-A75L
CL = 3
133 MHz
5.4 ns
CL = 2
100 MHz
6 ns
r Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
o Possible to assert random column address in every cycle
Quad internal banks controlled by BA0, BA1 (Bank Select)
Programmable burst-length: 1, 2, 4, 8 and Full Page
Programmable wrap sequence (Sequential / Interleave)
d Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
u Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
c 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
Unbuffered type
t Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0116N20 (Ver. 2.0)
Date Published September 2001 (K)
Printed in Japan
This product became EOL in March, 2004.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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