MC-4532CD646EF-A80 Ver la hoja de datos (PDF) - Elpida Memory, Inc
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MC-4532CD646EF-A80
Elpida Memory, Inc
MC-4532CD646EF-A80 Datasheet PDF : 16 Pages
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MC-4532CD646
Synchronous Characteristics
Parameter
Symbol
-A 80
-A 10
Unit Note
Clock cycle time
Access time from CLK
ECLK high level width
CLK low level width
Data-out hold time
OData-out low-impedance time
Data-out high-impedance time
L Data-in setup time
/CAS latency = 3 tCK3
/CAS latency = 2 tCK2
/CAS latency = 3 tAC3
/CAS latency = 2 tAC2
tCH
tCL
tOH
tLZ
/CAS latency = 3 tHZ3
/CAS latency = 2 tHZ2
tDS
MIN.
MAX.
MIN.
MAX.
8 (125 MHz) 10 (100 MHz) ns
10 (100 MHz) 13 (77 MHz) ns
6
6
ns
6
7
ns
3
3
ns
3
3
ns
3
3
ns
0
0
ns
3
6
3
6
ns
3
6
3
7
ns
2
2
ns
1
1
1
Data-in hold time
Address setup time
Address hold time
CKE setup time
CKE hold time
P CKE setup time (Power down exit)
Command (/CS0 - /CS3, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
Command (/CS0 - /CS3, /RAS, /CAS, /WE,
r DQMB0 - DQMB7) hold time
tDH
1
tAS
2
tAH
1
tCKS
2
tCKH
1
tCKSP
2
tCMS
2
tCMH
1
1
ns
2
ns
1
ns
2
ns
1
ns
2
ns
2
ns
1
ns
o Note 1. Output load
Output
Z = 50 Ω
50 pF
duct Remark These specifications are applied to the monolithic device.
8
Data Sheet E0055N10
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