MC-4R128FKE8S-845 Ver la hoja de datos (PDF) - Elpida Memory, Inc

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MC-4R128FKE8S-845

Direct Rambus DRAM SO-RIMM™ Module 128M-BYTE (64M-WORD x 18-BIT)

Elpida Memory, Inc 

MC-4R128FKE8S

SO-RIMM Module Current Profile

IDD

IDD1

IDD2

IDD3

IDD4

RIMM module power conditions Note1

One RDRAM in Read Note2, balance in NAP mode

One RDRAM in Read Note2, balance in Standby mode

One RDRAM in Read Note2, balance in Active mode

One RDRAM in Write, balance in NAP mode

-845

-845

-845

-845

MAX.

Unit

712.6

mA

970

mA

1105

mA

732.6

mA

IDD5

One RDRAM in Write, balance in Standby mode

-845

990

mA

IDD6

One RDRAM in Write, balance in Active mode

-845

1125

mA

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA or 290

mA for x18 ECC module for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

Data Sheet E0139N30 (Ver. 3.0)

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