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33290

ISO K Line Serial Link Interface

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise

noted.

Characteristic

Symbol

Min

Typ

Max

Unit

Fall Time (19)

RISO = 510 Ω to VBB, CISO = 10 nF to Ground

tfall(ISO)

–

µs

–

2.0

ISO Propagation Delay (20)

High to Low: RISO = 510 Ω, CISO = 500 pF (21)

Low to High: RISO = 510 Ω, CISO = 500 pF (22)

tPD(ISO)

–

–

µs

–

2.0

–

2.0

Notes

19. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB.

20. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay.

21. Step TX voltage from 0.2 VDD to 0.8 VDD. Time measured from VIH(ISO) until VISO reaches 0.3 VBB.

22. Step TX voltage from 0.8 VDD to 0.2 VDD. Time measured from VIL(ISO) until VISO reaches 0.7 VBB.

Analog Integrated Circuit Device Data

Freescale Semiconductor

33290

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