MC74HC393N Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Lista de partido

MC74HC393N

Dual 4−Stage Binary Ripple Counter

ON Semiconductor 

MC74HC393

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol

Parameter

Value

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout DC Output Voltage (Referenced to GND)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin

DC Input Current, per Pin

– 0.5 to VCC + 0.5 V

± 20

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout DC Output Current, per Pin

± 25

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC DC Supply Current, VCC and GND Pins

± 50

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD Power Dissipation in Still Air,Plastic or Ceramic DIP†

750

mW

SOIC Package†

500

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature

– 65 to + 150

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL Lead Temperature, 1 mm from Case for 10 Seconds

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Plastic or SOIC DIP)

260

(Ceramic DIP)

300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Maximum Ratings are those values beyond which damage to the device may occur.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Functional operation should be restricted to the Recommended Operating Conditions.

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

cuit. For proper operation, Vin and

Vout should be constrained to the

range GND v (Vin or Vout) v VCC.

Unused inputs must always be

tied to an appropriate logic voltage

level (e.g., either GND or VCC).

Unused outputs must be left open.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

Ceramic DIP: – 10 mW/_C from 100_ to 125_C

SOIC Package: – 7 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High−Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage (Referenced to GND)

2.0 6.0 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0

VCC

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA

Operating Temperature, All Package Types

– 55 + 125 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr, tf

Input Rise and Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Figure 1)

VCC = 2.0 V 0

VCC = 4.5 V 0

VCC = 6.0 V 0

1000 ns

500

400

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol

Parameter

VCC

Test Conditions

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIH

Minimum High−Level Input

Vout = 0.1 V or VCC – 0.1 V

2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage

|Iout| v 20 μA

4.5

6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIL

Maximum Low−Level Input

Vout = 0.1 V or VCC – 0.1 V

2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage

|Iout| v 20 μA

4.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOH

Minimum High−Level Output

Vin = VIH or VIL

2.0

Voltage

|Iout| v 20 μA

4.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOL

Maximum Low−Level Output

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage

Vin = VIH or VIL |Iout| v 4.0 mA 4.5

|Iout| v 5.2 mA 6.0

Vin = VIH or VIL

2.0

|Iout| v 20 μA

4.5

6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VIH or VIL |Iout| v 4.0 mA 4.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |Iout|v 5.2mA 6.0

Iin

Maximum Input Leakage Current Vin = VCC or GND

6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC

Maximum Quiescent Supply

Vin = VCC or GND

6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current (per Package)

Iout = 0 μA

Guaranteed Limit

– 55 to

25_C v 85_C v 125_C Unit

1.5

1.5

1.5

V

3.15

3.15

3.15

4.2

4.2

4.2

0.3

0.3

0.3

V

0.9

0.9

0.9

1.2

1.2

1.2

1.9

1.9

1.9

V

4.4

4.4

4.4

5.9

5.9

5.9

3.98

3.84

3.70

5.48

5.34

5.20

0.1

0.1

0.1

V

0.1

0.1

0.1

0.1

0.1

0.1

0.26

0.33

0.40

0.26

0.33

0.40

± 0.1

± 1.0

± 1.0

μA

8

80

160

μA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High−Speed CMOS Data Book (DL129/D).

http://onsemi.com

2

Share Link: