IRFF120 Ver la hoja de datos (PDF) - Intersil
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IRFF120 Datasheet PDF : 7 Pages
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IRFF120
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET
D
Pulse Source to Drain Current (Note 3)
ISM
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
MIN TYP MAX UNITS
-
-
6.0
A
-
-
24
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 6.0A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 6.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 6.0A, dISD/dt = 100A/µs
-
-
2.5
V
-
230
-
ns
-
1.0
-
µC
Forward Turn-On Time
tON
Intrinsic Turn-on Time is Negligible, Turn-On
-
-
-
-
Speed is Substantially controlled by LS + LD
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 1.5mH, RG = 25Ω, peak IAS = 6.0A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
6.0
1.0
4.8
0.8
3.6
0.6
2.4
0.4
1.2
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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