MCP6143-I Ver la hoja de datos (PDF) - Microchip Technology
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MCP6143-I Datasheet PDF : 38 Pages
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MCP6141/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym Min Typ Max Units
Conditions
AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
GBWP —
100
—
kHz
SR
—
24
— V/ms
PM
—
60
—
° G = +10 V/V
Eni
—
5.0
— µVP-P f = 0.1 Hz to 10 Hz
eni
—
170
— nV/√Hz f = 1 kHz
ini
—
0.6
— fA/√Hz f = 1 kHz
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym Min Typ Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
VIL
VSS
ICSL
—
—
VSS+0.3
V
5
—
pA CS = VSS
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
VIH VDD–0.3 —
VDD
V
ICSH
—
5
—
pA CS = VDD
ISS
—
-20
—
pA CS = VDD
IOLEAK
—
20
—
pA CS = VDD
CS Low to Amplifier Output Turn-on Time tON
—
2
50
ms G = +1 V/V, CS = 0.3V to
VOUT = 0.9VDD/2
CS High to Amplifier Output High-Z
Hysteresis
tOFF
—
10
—
µs G = +1 V/V, CS = VDD–0.3V to
VOUT = 0.1VDD/2
VHYST
—
0.6
—
V
VDD = 5.0V
CS
VIL
tON
VOUT High-Z
ISS -20 pA
(typical)
ICS 5 pA (typical)
-0.6 µA
(typical)
VIH
tOFF
High-Z
-20 pA
(typical)
5 pA (typical)
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6143 only).
DS21668D-page 4
© 2009 Microchip Technology Inc.
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