MCR12DSMT4 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Lista de partido
MCR12DSMT4 Datasheet PDF : 7 Pages
| |||
MCR12DSM, MCR12DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,− Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
RqJC
RqJA
RqJA
TL
Max
Unit
2.2
°C/W
88
80
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(VAK = Rated VDRM or VRRM; RGK = 1.0 KW)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
mA
−
−
10
−
−
500
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 mA)
Peak Reverse Gate Blocking Current, (VGR = 10 V)
Peak Forward On−State Voltage (Note 5), (ITM = 20 A)
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = −40°C
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = −40°C
TJ = 110°C
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
TJ = 25°C
TJ = −40°C
Latching Current
(VD = 12 V, IG = 2.0 mA)
TJ = 25°C
TJ = −40°C
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms)
DYNAMIC CHARACTERISTICS
VGRM
IGRM
VTM
IGT
VGT
IH
IL
tgt
10 12.5 18
V
−
−
1.2
mA
−
1.3 1.9
V
mA
5.0 12 200
−
−
300
V
0.45 0.65 1.0
−
−
1.5
0.2
−
−
mA
0.5 1.0 6.0
−
−
10
mA
0.5 1.0 6.0
−
−
10
ms
−
2.0 5.0
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110°C)
dv/dt
V/ms
2.0 10
−
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
6. RGK current not included in measurement.
http://onsemi.com
2
Share Link: 