IRFAC40 Ver la hoja de datos (PDF) - Intersil
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IRFAC40 Datasheet PDF : 7 Pages
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IRFAC40, IRFAC42
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
1300
-
pF
COSS
160
pF
CRSS
30
pF
LD
Measured Between Modified MOSFET
-
5.0
-
nH
the Contact Screw on Symbol Showing the
the Flange that is
Internal Devices
Closer to Source and Inductances
Gate Pins and the
D
Center of Die
LD
G
LS
S
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
LS
RθJC
RθJA
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
Free Air Operation
-
13
-
nH
-
-
1.0 oC/W
-
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD Modified MOSFET
Symbol Showing the
D
ISDM Integral Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
6.2
A
-
-
25
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 13)
-
-
1.5
V
trr
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
200 450 940 ns
QRR TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
1.8 3.8 7.9
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. See Figures 15, 16.
5-3
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