20N60B Ver la hoja de datos (PDF) - IXYS CORPORATION
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Lista de partido
20N60B Datasheet PDF : 4 Pages
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1.5
mJ
Eon 1.0
VCE = 300V
VGE = ±15V
RG = 22W
TJ = 125°C
0.5
75
Eon
ns
td(on)
50 t
tr
25
0.0
0
0
10
20
30 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
1.2
mJ
Eon 1.0
0.8
td(on)
tr
40
ns
30
Eon
t
20
0.6
0.4
0
VCE = 300V
VGE = ±15V 10
IC = 20A
TJ = 125°C
W0
10 20 30 40 50 60 70
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
80
RG = 22W
A TJ = 125°C
ICM 60
40
20
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
IXDP 20N60 B
IXDP 20N60 BD1
0.8
mJ
Eoff 0.6
td(off)
400
ns
300
t
0.4
200
Eoff VCE = 300V
VGE = ±15V
0.2
RG = 22W 100
tf
TJ = 125°C
0.0
0
0
10
20
30 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
1.00
mJ
0.75
Eoff
VCE = 300V
VGE = ±15V
IC = 20A
TJ = 125°C
0.50
800
ns
td(off)
600
t
Eoff
400
0.25
200
0.00
0
tf
W0
10 20 30 40 50 60 70
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
5
K/W
1
ZthJC
0.1
diode
IGBT
0.01
single pulse
0.001
10-5
10-4
10-3
10-2
10-1
t
IXDP20N06B
100 s 101
Fig. 12 Typ. transient thermal impedance
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4-4
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