IXFH20N60Q Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Lista de partido
IXFH20N60Q Datasheet PDF : 4 Pages
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Fig. 7. Input Admittance
40
35
30
25
20
TJ = -40ºC
15
25ºC
125ºC
10
5
0
3.5 4 4.5 5 5.5 6 6.5 7
VGS - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
60
50
40
30
20
TJ = 125ºC
10
0
0.3
TJ = 25ºC
0.5
0.7
0.9
1.1
VSD - Volts
IXFH 20N60Q
IXFT 20N60Q
Fig. 8. Transconductance
42
36 TJ = -40ºC
25ºC
30
125ºC
24
18
12
6
0
0
10
20
30
40
50
60
ID - Amperes
Fig. 10. Gate Charge
10
VDS = 300V
8
ID = 10A
IG= 10mA
6
4
2
0
0
20
40
60
80
100
QG - nanoCoulombs
10000
Fig. 11. Capacitance
f = 1M Hz
Fig. 12. Maximum Transient Thermal
Resistance
1
1000
Ciss
Coss
Crss
100
0 5 10 15 20 25 30 35 40
VDS - Volts
0.1
0.01
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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