MM118-XX Ver la hoja de datos (PDF) - Microsemi Corporation

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MM118-XX

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (IGBT) BRIDGE

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MM118-XX

Features

SERIES

• Available in Low Conduction Loss Class as MM118-xxL or Fast

Switching Class as MM118-xxF

600 / 1200 Volts

• Compact and rugged construction offering weight and space savings

• Available with PC board solderable pins (see mechanical outline below)

or threaded terminals (add “T”suffix to part number, see option below)

• HPM (Hermetic Power Module)

• Isolation voltage capability (in reference to the base) in excess of 3kV

• Very low thermal resistance

• Thermally matched construction provides excellent temperature and

power cycling capability

• Additional voltage ratings or terminations available upon request

150 Amps

3 PHASE N-CHANNEL

INSULATED GATE

BIPOLAR

TRANSISTOR (IGBT)

BRIDGE

Maximum Ratings per switch @ 25°C (unless otherwise specified)

PART NUMBER

SYMBOL

MM118-06 MM118-12

Collector-to-Emitter Breakdown Voltage (Gate shorted to

Emitter), @ Tj≥ 25°C

Collector-to-Gate Breakdown Voltage @ Tj≥ 25°C, RGS= 1

MΩ

Gate-to-Emitter Voltage

continuous

transient

Continuous Collector Current

Tj=

25°C

Tj= 90°C

Peak Collector Current, pulsewidth limited by Tj max

Power Dissipation

Thermal resistance, junction to base

per switch

BVCES

600 V

1200 V

BVCGR

600 V

1200 V

VGES

VGEM

IC25

IC90

+/- 20 V

+/- 30 V

60 A

32 A

+/- 20 V

+/- 30 V

52 A

33 A

ICM

PD

RΘ jc, max

RΘ , typ

120 A

165 W

104 A

165 W

0.75°C/W

0.5°C/W

0.75°C/W

0.5°C/W

Mechanical Outline

Datasheet# MSC0321A

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