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CM800DU-12H

Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts

Powerex 

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM800DU-12H

Dual IGBTMOD™ U-Series Module

800 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

CM800DU-12H

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (Tc = 25°C)

Peak Collector Current

Emitter Current** (Tc = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)

Mounting Torque, M8 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

-40 to 150

-40 to 125

600

±20

800

1600*

800

1600*

1500

95

Mounting Torque, M6 Mounting

–

40

G(E) Terminal, M4

–

15

Weight

–

1200

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

2500

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

in-lb

Grams

Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

Gate Leakage Voltage

IGES

VGE = VGES, VCE = 0V

Gate-Emitter Threshold Voltage

VGE(th)

IC = 80mA, VCE = 10V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 800A, VGE = 15V, Tj = 25°C

IC = 800A, VGE = 15V, Tj = 125°C

Total Gate Charge

QG

VCC = 300V, IC = 800A, VGE = 15V

Emitter-Collector Voltage**

VEC

IE = 800A, VGE = 0V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Min.

Typ.

Max. Units

–

–

2

mA

–

–

0.5

µA

4.5

6

7.5

Volts

–

2.55 3.15 Volts

–

2.75 –

Volts

–

1600

–

nC

–

–

2.6

Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Cies

Output Capacitance

Coes

VCE = 10V, VGE = 0V

Reverse Transfer Capacitance

Cres

Resistive

Turn-on Delay Time

td(on)

VCC = 300V, IC = 800A,

Load

Rise Time

tr

VGE1 = VGE2 = 15V,

Switch

Turn-off Delay Time

td(off)

RG = 3.1⍀, Resistive

Times

Fall Time

tf

Load Switching Operation

Diode Reverse Recovery Time**

trr

IE = 800A, diE/dt = -1600A/µs

Diode Reverse Recovery Charge**

Qrr

IE = 800A, diE/dt = -1600A/µs

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Min.

Typ.

Max. Units

–

–

70.4

nf

–

–

38.4

nf

–

–

10.4

nf

–

–

400

ns

–

–

2000 ns

–

–

500

ns

–

–

300

ns

–

–

160

ns

–

1.92 –

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)Q

Per IGBT 1/2 Module

–

Thermal Resistance, Junction to Case

Rth(j-c)R

Per FWDi 1/2 Module

–

Contact Thermal Resistance

2

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ.

–

–

0.010

Max. Units

0.083 °C/W

0.13 °C/W

–

°C/W

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