BSM 10 GD 60 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
36
W
Ptot
28
24
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
A
IC 10 1
tp = 18.0µs
100 µs
20
10 0
16
1 ms
12
8
4
0
0
20 40 60 80 100 °C 130
TC
10 -1
10 -2
10 0
10 1
10 ms
DC
10 2
V 10 3
VCE
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
12
A
10
IC
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
K/W
ZthJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
4
Jan-09-1997