MMBT6428LT1G Ver la hoja de datos (PDF) - ON Semiconductor

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MMBT6428LT1G

Amplifier Transistors

ON Semiconductor 

MMBT6428LT1, MMBT6429LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

(IC = 1.0 mAdc, IB = 0)

MMBT6428

MMBT6429

Collector −Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

(IC = 0.1 mAdc, IE = 0)

Collector Cutoff Current

(VCE = 30 Vdc)

MMBT6428

MMBT6429

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 0.01 mAdc, VCE = 5.0 Vdc)

MMBT6428

MMBT6429

(IC = 0.1 mAdc, VCE = 5.0 Vdc)

MMBT6428

MMBT6429

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

MMBT6428

MMBT6429

(IC = 10 mAdc, VCE = 5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 100 mAdc, IB = 5.0 mAdc)

Base −Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

MMBT6428

MMBT6429

Symbol

V(BR)CEO

V(BR)CBO

ICES

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

fT

Cobo

Cibo

Min

Max

Unit

Vdc

50

−

45

−

Vdc

60

−

55

−

mAdc

−

0.1

mAdc

−

0.01

mAdc

−

0.01

−

250

−

500

−

250

650

500 1250

250

−

500

−

250

−

500

−

Vdc

−

0.2

−

0.6

Vdc

0.56 0.66

MHz

100

700

pF

−

3.0

pF

−

8.0

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

http://onsemi.com

2

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