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MMBTA44

SOT-23-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-3L Plastic-Encapsulate Transistors

MMBTA44 TRANSISTOR (NPN)

FEATURES

SOT-23-3L

1. BASE

2. EMITTER

3. COLLECTOR

Power dissipation

PCM:

0.35 W (Tamb=25℃)

2. 80¡ À0. 05

1. 60¡ À0. 05

Collector current

ICM:

Collector-base voltage

0.2 A

V(BR)CBO:

400 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA, IE=0

400

Collector-emitter breakdown voltage V(BR)CEO

IC= 1mA , IB=0

400

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

Collector cut-off current

ICBO

VCB=400V, IE=0

Collector cut-off current

ICEO

VCE=400V

Emitter cut-off current

IEBO

VEB= 4V, IC=0

HFE(1)

VCE=10V, IC=10 mA

80

DC current gain

HFE(2)

VCE=10V, IC=1mA

70

HFE(3)

VCE=10V, IC=100 mA

60

Collector-emitter saturation voltage

VCE(sat)

VCE(sat)

IC=10 mA, IB=1mA

IC=50 mA, IB=5mA

Base-emitter sataration voltage

Transition frequency

VBE(sat)

IC=10 mA, IB= 1 mA

VCE=20V, IC=10mA

fT

50

f =30MHz

MAX

0.1

5

0.1

300

0.2

0.3

0.75

UNIT

V

V

V

µA

µA

µA

V

V

V

MHz

MARKING

3D

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